APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 1 C 8 out s1g2 s2 g1 q2 0/vbus vbus q1 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 800 v i d continuous drain current t c = 25c 56 a t c = 80c 43 i dm pulsed drain current 232 v gs gate - source voltage 30 v r dson drain - source on resistance 75 m p d maximum power dissipation t c = 25c 568 w i ar avalanche current (repetitive and non repetitive) 17 a e ar repetitive avalanche energy 0.5 mj e as single pulse avalanche energy 670 v dss = 800v r dson = 75m max @ tj = 25c i d = 56a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant phase leg series & sic parallel diodes super junction mosfet power module downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 2 C 8 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 25c 100 a v gs = 0v,v ds = 800v t j = 125c 1000 r ds(on) drain C source on resistance v gs = 10v, i d = 28a 75 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 4ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 9015 pf c oss output capacitance 4183 c rss reverse transfer capacitance 215 q g total gate charge v gs = 10v v bus = 400v i d = 56a 364 nc q gs gate C source charge 48 q gd gate C drain charge 184 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 533v i d = 56a r g = 1.2 ? 10 ns t r rise time 13 t d(off) turn-off delay time 83 t f fall time 35 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 533v i d = 56a, r g = 1.2 ? 583 j e off turn-off switching energy 556 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 533v i d = 56a, r g = 1.2 ? 1020 j e off turn-off switching energy 684 r thjc junction to case thermal resistance 0.22 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 300 a i f dc forward current t c = 80c 120 a v f diode forward voltage i f = 120a 1.9 2.5 v i f = 240a 2.2 i f = 120a t j = 125c 1.7 t rr reverse recovery time i f = 120a v r = 667v di/dt = 400a/s t j = 25c 280 ns t j = 125c 350 q rr reverse recovery charge t j = 25c 1.52 c t j = 125c 7.2 r thjc junction to case thermal resistance 0.46 c/w downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 3 C 8 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 300 1200 a t j = 175c 600 6000 i f dc forward current tc = 100c 30 a v f diode forward voltage i f = 30a t j = 25c 1.6 1.8 v t j = 175c 2.6 3.0 q c total capacitive charge i f = 30a, v r = 1200v di/dt =1600a/s 168 nc q total capacitance f = 1mhz, v r = 200v 270 pf f = 1mhz, v r = 400v 198 r thjc junction to case thermal resistance 0.45 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructio ns for sp6 power modules on www.microsemi.com downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 4 C 8 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 i d , drain current (a) v ds , drain to source voltage (v) v gs =15&10v low voltage output characteristics t j =25c t j =125c 0 50 100 150 200 012345678 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xrds(on)max 250s pulse test @ < 0.5 duty v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20406080100120 i d , drain current (a) r ds(on) vs drain current r ds (on) drain to source on resistance normalized to v gs =10v @ 28a 0 10 20 30 40 50 60 25 50 75 100 125 150 i d , dc drain current (a) t c , case temperature (c) dc drain current vs case temperature downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 5 C 8 0.95 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d = 28a 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) 100ms 1ms 100s 0 1 10 100 1000 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maximum safe operating area limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =160v v ds =400v v ds =640v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 gate charge (nc) gate charge vs gate to source voltage v gs , gate to source voltage (v) i d =56a t j =25c downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 6 C 8 t d(on) t d(off) 0 20 40 60 80 100 20 30 40 50 60 70 80 90 td(on) and td(off) (ns) i d , drain current (a) delay times vs current v ds =533v r g =1.2 ? t j =1 25 c l=100h t r t f 0 10 20 30 40 50 20 30 40 50 60 70 80 90 t r and t f (ns) i d , drain current (a) rise and fall times vs current v ds =533v r g =1.2 ? t j =1 25 c l=100h e on e off 0 0.4 0.8 1.2 1.6 2 20 30 40 50 60 70 80 90 eon and eoff (mj) i d , drain current (a) switching energy vs current v ds =533v r g =1.2 ? t j =1 25 c l=100h e on e off 0.5 1 1.5 2 2.5 3 3.5 02 . 557 . 51 0 switching energy (mj) gate resistance (ohms) switching energy vs gate resistance v ds =533v i d =56a t j =1 25 c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 10 20 30 40 50 frequency (khz) i d , drain current (a) operating frequency vs drain current v ds =533v d=50% r g =1.2 ? t j =1 25 c t c =75 c t j =25c t j =150c 1 10 100 1000 0.2 0.6 1 1.4 1.8 i dr , reverse drain current (a) v sd , source to drain voltage (v) source to drain diode forward voltage downloaded from: http:///
APTC80AM75SCG APTC80AM75SCG C rev 4 october, 2013 www.microsemi.com 7 C 8 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse dur ation 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 300 600 900 1200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 400 800 1200 1600 2000 2400 1 10 100 1000 v r reverse voltage c, capacitance (pf) coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
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